inchange semiconductor isc product specification isc silicon pnp power transistor BD802 description collector-emitter sustaining voltage- : v ceo(sus) = -100v(min) low saturation voltage complement to type bd801 applications designed for a wide variety of medium-powe r switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. absolute maximum rating s (t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -8 a i b b base current-continuous -3 a p c collector power dissipation t c =25 65 w t j junction temperature 150 t stg storage ttemperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.92 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD802 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = -100ma; i b = 0 -100 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -1 v v be (on) base-emitter on voltage i c = -3a ; v ce = -2v -1.6 v i cbo collector cutoff current v cb = -100v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -1 ma h fe-1 dc current gain i c = -1a ; v ce = -2v 30 h fe-2 dc current gain i c = -3a ; v ce = -2v 15 f t current-gain?bandwidth product i c = -0.25a ;v ce = -10v,f test = 1mhz 3 mhz isc website www.iscsemi.cn
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